Display apparatus

ABSTRACT

A display apparatus including a panel substrate, a TFT panel part disposed on an upper surface of the panel substrate and including a plurality of connection electrodes, and a light emitting diode part disposed on the TFT panel part and comprising a plurality of pixels, in which each of the pixels includes at least three sub-pixels including a first sub-pixel, a second sub-pixel, and a third sub-pixel, and the first sub-pixel has a size greater than those of the second and the third sub-pixels.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.16/821,251, filed on Mar. 17, 2020, which is a Continuation of U.S.patent application Ser. No. 15/688,425, filed on Aug. 28, 2017, nowissued as U.S. Pat. No. 10,606,121 on Mar. 31, 2020, which claimspriority from and the benefit of U.S. Provisional Patent Application No.62/393,515, filed on Sep. 12, 2016, each of which is hereby incorporatedby reference for all purposes as if fully set forth herein.

BACKGROUND Field

Exemplary embodiments of the present disclosure relate to a displayapparatus, and more particularly, to a display apparatus usingmicro-light emitting diodes.

Discussion of the Background

A light emitting diode refers to an inorganic semiconductor device thatemits light through recombination of electrons and holes. In recentyears, light emitting diodes have been used in various fields includingdisplays, automobile lamps, general lighting, and the like, andapplication fields of such light emitting diodes have expanded.

Light emitting diodes have various advantages, such as long lifespan,low power consumption, and rapid response. Thus, a light emitting deviceusing a light emitting diode can be used as a light source in variousfields.

Recently, smart TVs or monitors realize colors using a thin filmtransistor liquid crystal display (TFT-LCD) panel, and use lightemitting diodes as a light source for a backlight unit for colorrealization. In addition, a display apparatus is often manufacturedusing organic light emitting diodes (OLEDs).

As a backlight light source of a TFT-LCD panel, one LED may be used tosupply light to many pixels of the TFT-LCD panel. In this structure,since the backlight light source is be kept on regardless of colorsdisplayed on a screen of the TFT-LCD panel, the TFT-LCD panel suffersfrom constant power consumption regardless of brightness of a displayedscreen.

In addition, although power consumption of an OLED display apparatus hasbeen continuously reduced due to technological development, OLEDs stillhave much higher power consumption than LEDs formed of inorganicsemiconductors, and thus, generally have lower efficiency than LEDs.

Moreover, a passive-matrix (PM) drive type OLED display apparatus maysuffer from deterioration in response speed from pulse amplitudemodulation (PAM) of the OLED having large capacitance. In addition, thePM drive type OLED display apparatus can suffer from deterioration inlifespan from high current driving through pulse width modulation (PWM)for realizing a low duty ratio.

Moreover, an AM driving type OLED display apparatus requires connectionof TFTs for each pixel, thereby causing increase in manufacturing costsand non-uniform brightness according to characteristics of TFTs.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the inventiveconcepts, and, therefore, it may contain information that does not formthe prior art that is already known in this country to a person ofordinary skill in the art.

SUMMARY

Exemplary embodiments of the present disclosure provide a displayapparatus using micro-light emitting diodes having low power consumptionto be applicable to a wearable apparatus, a smartphone or a TV.

According to an exemplary embodiment, a display apparatus includes alight emitting part including a plurality of light emitting diodesspaced apart from each other, and a light conversion part configured toconvert light emitted from the light emitting part, in which the lightemitting diodes include at least one first light emitting diode and atleast one second light emitting diode, the light conversion part emitsred light through wavelength conversion of light emitted from the atleast one first light emitting diode, and the at least one second lightemitting diode emits green light.

The at least one first light emitting diode may be a blue light emittingdiode or a ultra-violet (UV) light emitting diode, and the lightconversion part may include a red phosphor layer emitting red lightthrough wavelength conversion of light emitted from the at least onefirst light emitting diode.

The at least one first light emitting diode may be disposed in a firstsubpixel, the at least one second light emitting diode may be disposedin a second subpixel, and the first subpixel may have a size greaterthan the second subpixel.

The light emitting diodes may further include at least one third lightemitting diode disposed in a third subpixel, the first subpixel may havea size greater than the third subpixel, and the first subpixel may bedisposed on a first side surface opposing a second side surface on whichthe second and third subpixels are linearly disposed.

The light emitting diodes may further include at least one third lightemitting diode, the at least one second light emitting diode may be agreen light emitting diode, and the at least one third light emittingdiode may be a blue light emitting diode.

The light emitting diodes may further include at least one third lightemitting diode, the at least one third light emitting diode being a UVlight emitting diode, and the light conversion part may further includea blue phosphor layer emitting blue light through wavelength conversionof UV light emitted from the UV light emitting diode.

The light emitting diodes may further include at least one fourth lightemitting diode, the at least one fourth light emitting diode being ablue light emitting diode, and the light conversion part may furtherinclude a white phosphor layer emitting white light through wavelengthconversion of light emitted from the fourth light emitting diode.

The first to fourth light emitting diode may be disposed in first tofourth subpixels, respectively, and the first and fourth subpixels mayhave a size greater than the second and third subpixels.

The first and second subpixels may be disposed in one column, the thirdand fourth subpixels may be disposed in another column, and the firstand fourth subpixels may be disposed in one row.

The light conversion part may include a color filter blocking light ofwavelengths other than the red light.

The light emitting part may include a plurality of light emittingdiodes, a transparent electrode disposed on the light emitting diodesand electrically connected to the light emitting diodes, a connectionelectrode disposed under the light emitting diodes and electricallyconnected to the light emitting diodes, and a blocking portions disposedbetween the light emitting diodes and electrically connected to thetransparent electrodes.

Each of the light emitting diodes may include an n-type semiconductorlayer, a p-type semiconductor layer, and an active layer interposedbetween the n-type semiconductor layer and the p-type semiconductorlayer.

The light conversion part may include a phosphor layer including a redphosphor layer emitting red light through wavelength conversion of lightemitted from the at least one first light emitting diode, and aprotective substrate disposed on the phosphor layer.

The phosphor layer may further include a transparent layer through whichlight emitted from the second light emitting diode passes withoutwavelength conversion.

The display apparatus may further include a color filter disposedbetween the phosphor layer and the protective substrate, and blockinglight emitted from the phosphor layer having a first wavelength.

The display apparatus may further include a thin film transistor (TFT)panel part including a plurality of TFTs configured to drive the lightemitting diodes, in which the light emitting part and the TFT panel partare coupled to face each other at one side thereof, such that the lightemitting diodes are electrically connected to the TFTs, respectively.

The foregoing general description and the following detailed descriptionare exemplary and explanatory and are intended to provide furtherexplanation of the claimed subject matter.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the inventive concepts, and are incorporated in andconstitute a part of this specification, illustrate exemplaryembodiments of the inventive concepts, and, together with thedescription, serve to explain principles of the inventive concepts.

FIG. 1 is a plan view of a pixel of a display apparatus according to afirst exemplary embodiment.

FIG. 2 is a cross-sectional view of the pixel of the display apparatusaccording to the first exemplary embodiment.

FIG. 3 is a cross-sectional view of a pixel of a display apparatusaccording to a second exemplary embodiment.

FIG. 4 is a plan view of a pixel of a display apparatus according to athird exemplary embodiment.

FIG. 5 is a cross-sectional view of the pixel of the display apparatusaccording to the third exemplary embodiment.

FIG. 6 is a cross-sectional view of a pixel of a display apparatusaccording to a fourth exemplary embodiment.

FIG. 7 is a cross-sectional view of a pixel of a display apparatusaccording to a fifth exemplary embodiment.

FIG. 8 is a plan view of a pixel of a display apparatus according to asixth exemplary embodiment.

FIG. 9 is a cross-sectional view of the pixel of the display apparatusaccording to the sixth exemplary embodiment.

FIG. 10 is a cross-sectional view of a pixel of a display apparatusaccording to a seventh exemplary embodiment.

FIG. 11 is a plan view of a pixel of a display apparatus according to aneighth exemplary embodiment.

FIG. 12A and FIG. 12B are cross-sectional views taken along line A-A′and line B-B′ of FIG. 11, respectively.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments. It is apparent, however,that various exemplary embodiments may be practiced without thesespecific details or with one or more equivalent arrangements. In otherinstances, well-known structures and devices are shown in block diagramform in order to avoid unnecessarily obscuring various exemplaryembodiments.

In the accompanying figures, the size and relative sizes of layers,films, panels, regions, etc., may be exaggerated for clarity anddescriptive purposes. Also, like reference numerals denote likeelements.

When an element or layer is referred to as being “on,” “connected to,”or “coupled to” another element or layer, it may be directly on,connected to, or coupled to the other element or layer or interveningelements or layers may be present. When, however, an element or layer isreferred to as being “directly on,” “directly connected to,” or“directly coupled to” another element or layer, there are no interveningelements or layers present. For the purposes of this disclosure, “atleast one of X, Y, and Z” and “at least one selected from the groupconsisting of X, Y, and Z” may be construed as X only, Y only, Z only,or any combination of two or more of X, Y, and Z, such as, for instance,XYZ, XYY, YZ, and ZZ. Like numbers refer to like elements throughout. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

Although the terms first, second, etc. may be used herein to describevarious elements, components, regions, layers, and/or sections, theseelements, components, regions, layers, and/or sections should not belimited by these terms. These terms are used to distinguish one element,component, region, layer, and/or section from another element,component, region, layer, and/or section. Thus, a first element,component, region, layer, and/or section discussed below could be termeda second element, component, region, layer, and/or section withoutdeparting from the teachings of the present disclosure.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, may be used herein for descriptive purposes, and,thereby, to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the drawings. Spatiallyrelative terms are intended to encompass different orientations of anapparatus in use, operation, and/or manufacture in addition to theorientation depicted in the drawings. For example, if the apparatus inthe drawings is turned over, elements described as “below” or “beneath”other elements or features would then be oriented “above” the otherelements or features. Thus, the exemplary term “below” can encompassboth an orientation of above and below. Furthermore, the apparatus maybe otherwise oriented (e.g., rotated 90 degrees or at otherorientations), and, as such, the spatially relative descriptors usedherein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof.

Various exemplary embodiments are described herein with reference tosectional illustrations that are schematic illustrations of idealizedexemplary embodiments and/or intermediate structures. As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should not beconstrued as limited to the particular illustrated shapes of regions,but are to include deviations in shapes that result from, for instance,manufacturing. The regions illustrated in the drawings are schematic innature and their shapes are not intended to illustrate the actual shapeof a region of a device and are not intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

Hereinafter, various exemplary embodiments will be described withreference to the accompanying drawings. The numbering of the exemplaryembodiments as first, second, third, etc. is merely for convenience andnot a limitation on the number or type of embodiments that may beconstructed according to the principles of the invention.

FIG. 1 is a plan view of a pixel of a display apparatus according to afirst exemplary embodiment. FIG. 2 is a cross-sectional view of thepixel of the display apparatus according to the first exemplaryembodiment.

Referring to FIG. 1 and FIG. 2, the display apparatus 100 according tothe first exemplary embodiment includes a light emitting diode part 110,a TFT panel part 130, and an anisotropic conductive film 150. The lightemitting diode part 110 includes a light emitting part 111 and a lightconversion part 123.

The light emitting part 111 includes blue light emitting diodes 112 a,green light emitting diodes 112 b, transparent electrodes 116, blockingportions 118, and first connection electrodes 122.

The blue light emitting diode 112 a and the green light emitting diode112 b are provided in plural and arranged at regular intervals. Forexample, a plurality of blue light emitting diodes 112 a and a pluralityof green light emitting diodes 112 b may be arranged at constantintervals in rows and columns. In this manner, a plurality of pixels maybe formed.

Referring to FIG. 1, according to the first exemplary embodiment, onepixel may include three subpixels SP1, SP2, and SP3, in which one greenlight emitting diode 112 b is disposed in a second subpixel SP2 and twoblue light emitting diodes 112 a are disposed in the remaining twosubpixels SP1, SP2, respectively. Hereinafter, although the subpixelsSP1, SP2, and SP3 will be described as including one of the lightemitting diodes 112 a and 112 b, the inventive concept is not limitedthereto, and two or more light emitting diodes may be provided to onesubpixel SP1, SP2 or SP3, as needed.

In this exemplary embodiment, each of the subpixels SP1, SP2, and SP3may have a larger size than the light emitting diode 112 a or 112 bdisposed in the corresponding subpixel SP1, SP2 or SP3. In addition, thesubpixels SP1, SP2, SP3 may have the same size from each other.

In the display apparatus 100 according to this exemplary embodiment,when power is applied to each of the light emitting diodes 112 a and 112b, each of the light emitting diodes 112 a and 112 b can be turned on oroff by power applied thereto and the light emitting part 111 coupled tothe light conversion part 123 may be driven. More particularly, lightemitted from the light emitting part 111 is converted into blue light,green light, and red light while passing through the light conversionpart 123, whereby blue light, green light, and red light may bedischarged from the display apparatus 100. Accordingly, the lightemitting diode part 110 of the display apparatus 100 may be drivenwithout a separate LCD.

In this exemplary embodiment, each of the blue light emitting diode 112a and the green light emitting diode 112 b may include an n-typesemiconductor layer 23, an active layer 25, and a p-type semiconductorlayer 27. Here, each of the n-type semiconductor layer 23, the activelayer 25, and the p-type semiconductor layer 27 may include Group III-Vbased compound semiconductors. For example, these semiconductor layersmay include nitride semiconductors, such as (Al, Ga, In)N. According toan exemplary embodiment, locations of the n-type semiconductor layer 23and the p-type semiconductor layer 27 can be interchanged.

The n-type semiconductor layer 23 may be a conductive semiconductorlayer including an n-type dopant (for example, Si), and the p-typesemiconductor layer 27 may be a conductive semiconductor layer includinga p-type dopant (for example, Mg). The active layer 25 is interposedbetween the n-type semiconductor layer 23 and the p-type semiconductorlayer 27, and may have a multi-quantum well (MQW) structure. Thecomposition of the active layer 25 may be determined to emit lighthaving a desired peak wavelength. With this structure, the blue lightemitting diode 112 a can emit blue light having a peak wavelength of,for example, 430 nm to 470 nm, and the green light emitting diode 112 bcan emit green light having a peak wavelength of, for example, 510 nm to550 nm.

In this exemplary embodiment, each of the blue light emitting diode 112a and the green light emitting diode 112 b may have the shape of avertical type light emitting diode. In this structure, an n-typeelectrode may be formed on an outer surface of the n-type semiconductorlayer 23 and a p-type electrode may be formed on an outer surface of thep-type semiconductor layer 27. Hereinafter, descriptions with respect tothe n-type electrode and the p-type electrode will be omitted forconvenience of description. In an exemplary embodiment, at least one ofthe n-type electrode and the p-type electrode may be provided in plural.

The transparent electrode 116 may be electrically connected to then-type semiconductor layer 23 of the blue light emitting diode 112 a andthe green light emitting diode 112 b, and may be electrically connectedto the blocking portion 118. The transparent electrode 116 may have asthin a thickness as possible, and may be transparent to allow lightemitted from the blue light emitting diode 112 a and the green lightemitting diode 112 b to reach the light conversion part 123therethrough. For example, the transparent electrode 116 may includeindium tin oxide (ITO).

The blocking portions 118 are disposed to define a region for onesubpixel, and may include a material exhibiting electrical conductivity.Accordingly, a region for each subpixel may be defined by the blockingportions 118, and each of the blue light emitting diode 112 a and thegreen light emitting diode 112 b may be disposed in each of thesubpixels SP1, SP2, SP3.

With this arrangement of the blocking portion 118, light emitted fromone subpixel may be prevented from reaching other subpixels adjacentthereto. In this exemplary embodiment, a side surface of the blockingportion 118 may be a reflective surface capable of reflecting lightemitted from the blue light emitting diode 112 a or the green lightemitting diode 112 b. In addition, although the side surface of theblocking portion 118 is shown as being vertical with respect to the TFTpanel part 130, the side surface of the blocking portion 118 may beinclined with respect to the TFT panel part 130. Accordingly, lightemitted from each of the light emitting diodes 112 a and 112 b may bereflected by the blocking portion 118 to be discharged in an upwarddirection of the subpixel.

The blocking portions 118 may be electrically connected to the TFT panelpart 130, such that the TFT panel part 130 may be electrically connectedto the n-type semiconductor layer 23 through the transparent electrodes116 and the blocking portions 118.

The first connection electrodes 122 may be provided in plural, such thatone first connection electrode 122 is disposed in each of the subpixelsSP1, SP2, and SP3 and electrically connected to the p-type semiconductorlayer 27 of the blue light emitting diode 112 a and the green lightemitting diode 112 b. Accordingly, the TFT panel part 130 may beelectrically connected to the p-type semiconductor layer 27 through thefirst connection electrodes 122.

In this exemplary embodiment, the light conversion part 123 includes aphosphor layer 126, a color filter 127, and a protective substrate 128.

The phosphor layer 126 may be disposed on the protective substrate 128,and include a red phosphor layer 126 c and a transparent layer 126 e. Inaddition, a blocking layer 126 d may be interposed between the redphosphor layer 126 c and the transparent layer 126 e. The blocking layer126 d may prevent mixture of light by preventing light having enteredthe red phosphor layer 126 c or the transparent layer 126 e fromentering another red phosphor layer 126 c or transparent layer 126 eadjacent thereto.

As shown in FIG. 1 and FIG. 2, the red phosphor layer 126 c is disposedin a region corresponding to a location, at which one of two blue lightemitting diodes 112 a is disposed. The transparent layer 126 e isdisposed in each region where the blue light emitting diode 112 a or thegreen light emitting diode 112 b is disposed. That is, the red phosphorlayer 126 c is disposed in the first subpixel SP1 and the transparentlayer 126 e is disposed in each of the second and third subpixels SP2,SP3. In this exemplary embodiment, the blocking layer 126 d may bedisposed between the transparent layers 126 e.

In this structure, green light and blue light emitted from the greenlight emitting diode 112 b and the blue light emitting diode 112 adisposed in the second and third subpixels SP2 and SP3, on which thetransparent layer 126 e is disposed, may be discharged through thetransparent layer 126 e. In addition, light emitted from the blue lightemitting diode 112 a disposed in the first subpixel SP1 may be convertedinto red light through wavelength conversion of the red phosphor layer126 c disposed at the location corresponding to the blue light emittingdiode 112 a, whereby the red light may be discharged to the outside.

Further, in this exemplary embodiment, the color filter 127 may beinterposed between the phosphor layer 126 and the protective substrate128. The color filter 127 may include a red light portion 127 c, a lightblocking portion 127 d, and a transparent portion 127 e. In thisexemplary embodiment, the color filter 127 may be formed as a film andmay block light having passed through the color filter 127, excludinglight of a desired wavelength.

More particularly, the red light portion 127 c allows only red light topass therethrough by blocking light having other wavelengths than thered light. In this exemplary embodiment, the red light portion 127 c isdisposed at a location corresponding to the red phosphor layer 126 c, sothat light emitted from the red phosphor layer 126 c enters the redlight portion 127 c. Although most blue light emitted from the bluelight emitting diode 112 a is converted into red light throughwavelength conversion of the red phosphor layer 126 c, some fractions ofthe blue right may be discharged to the outside without wavelengthconversion. Accordingly, the red light portion 127 c may block the bluelight not subjected to wavelength conversion while passing through thered phosphor layer 126 c.

The transparent portion 127 e may be disposed at a locationcorresponding to the transparent layer 126 e of the phosphor layer 126.Accordingly, the transparent portion 127 e allows blue light and greenlight having passed through the transparent layer 126 e to be dischargedtherethrough without wavelength conversion. Further, the light blockingportion 127 d is disposed between the red light portion 127 c and thetransparent portion 127 e and may block light having passed though thered light portion 127 c and the transparent portion 127 e from beingdischarged to other sides.

The protective substrate 128 is disposed to contact the color filter 127and may protect the color filter 127 from an external environment, bypreventing the color filter 127 from being directly exposed to theoutside. In this exemplary embodiment, the protective substrate 128 maybe formed of a transparent material to allow light to pass therethrough.

The TFT panel part 130 is coupled to the light emitting part 111 andserves to supply power to the light emitting part 111. The TFT panelpart 130 includes a panel substrate 132 and second connection electrodes134. The TFT panel part 130 may control power supply to the lightemitting part 111 to allow only some of the blue light emitting diode112 a and the green light emitting diode 112 b in the light emittingpart 111 to emit light, and may control the intensity of light emittedfrom the light emitting diodes 112 a and 112 b.

The panel substrate 132 may have a TFT drive circuit therein. The TFTdrive circuit may be a circuit for driving an active matrix (AM) or acircuit for driving a passive matrix (PM).

The second connection electrodes 134 are electrically connected to theTFT drive circuit of the panel substrate 132 and to the first connectionelectrodes 122 or the blocking portions 118 of the light emitting part111. That is, the connection electrodes 134 may be provided in pluraland may be separated from each other. Power supplied through the TFTdrive circuit may be supplied to the blue light emitting diodes 112 aand the green light emitting diodes 112 b through the first connectionelectrodes 122 and the blocking portions 118 via the second connectionelectrodes 134. The second connection electrodes 134 may be covered by aseparate protective substrate, which may include, for example, siliconnitride (SiN_(x)).

The anisotropic conductive film 150 may electrically connect the lightemitting part 111 to the TFT panel part 130. The anisotropic conductivefilm 150 may include an adhesive organic insulating material, which mayinclude conductive particles uniformly dispersed therein to achieveelectrical connection. The anisotropic conductive film 150 exhibitselectrical conductivity in the thickness direction thereof andinsulating properties in the plane direction thereof. In addition, theanisotropic conductive film 150 exhibits adhesive properties. With thisstructure, the anisotropic conductive film 150 may bond the lightemitting part 111 to the TFT panel part 130, such that the lightemitting part 111 may be electrically connected to the TFT panel part130 therethrough. Particularly, the anisotropic conductive film 150 maybe advantageously used to connect ITO electrodes, which are generallyknown as being difficult to solder at high temperature.

As such, when the light emitting part 111 is coupled to the TFT panelpart 130 via the anisotropic conductive film 150, each of the firstconnection electrode 122 and the blocking portion 118 may beelectrically connected to the second connection electrode 134 via anelectrode connection portion 152.

FIG. 3 is a cross-sectional view of a pixel of a display apparatusaccording to a second exemplary embodiment.

Referring to FIG. 3, the display apparatus 200 according to the secondexemplary embodiment includes a light emitting diode part 110, a TFTpanel part 130, and an anisotropic conductive film 150. The lightemitting diode part 110 includes a light emitting part 111 and a lightconversion part 123. The display apparatus 200 according to the secondexemplary embodiment may include components substantially similar tothose of the display apparatus 100 according to the first exemplaryembodiment shown in FIGS. 1 and 2, and thus, repeated descriptionsthereof will be omitted.

The light emitting part 111 includes blue light emitting diodes 112 a,green light emitting diodes 112 b, transparent electrodes 116, blockingportions 118, and first connection electrodes 122. The light conversionpart 123 includes a phosphor layer 126 and a protective substrate 128.

Unlike the first exemplary embodiment, the light conversion part 123 ofthe display apparatus 200 according to this exemplary embodiment doesnot include the color filter 127 (see FIG. 2). Accordingly, blue lightemitted from one of two blue light emitting diodes 112 a in the lightemitting part 111 is converted into red light by wavelength conversionwhile passing through a red phosphor layer 126 c of the phosphor layer126, whereby the red light may be discharged to the outside through theprotective substrate 128. More particularly, in this exemplaryembodiment, the phosphor layer 126 includes the red phosphor layer 126 cand a transparent layer 126 e. As such, when the light conversion part123 includes the phosphor layer 126 and the protective substrate 128,the light conversion part 123 may be formed to have a smaller thicknessthan in the first exemplary embodiment.

Although the light emitting part 111 includes the blue light emittingdiodes 112 a and the green light emitting diodes 112 b in the first andsecond exemplary embodiments, the light emitting part 111 may furtherinclude a UV light emitting diode 112 d, as needed. The UV lightemitting diode 112 d may be disposed in the first subpixel SP1, in whichthe red phosphor layer 126 c of the phosphor layer 126 is disposed, andreplace the blue light emitting diode 112 a of the first and secondexemplary embodiments. Accordingly, UV light emitted from the UV lightemitting diode 112 d is converted into red light through wavelengthconversion of the red phosphor layer 126 c, whereby the red light may bedischarged to the outside. The UV light emitting diode 112 d may emit UVlight having a peak wavelength of, for example, 360 nm to 430 nm.

As in the first exemplary embodiment, the second and third subpixels SP2and SP3 include the green light emitting diode 112 b and the blue lightemitting diode 112 a, respectively.

FIG. 4 is a plan view of a pixel of a display apparatus according to athird exemplary embodiment. FIG. 5 is a cross-sectional view of thepixel of the display apparatus according to the third exemplaryembodiment.

Referring to FIG. 4 and FIG. 5, the display apparatus 300 according tothe third exemplary embodiment includes a light emitting diode part 110,a TFT panel part 130, and an anisotropic conductive film 150. The lightemitting diode part 110 includes a light emitting part 111 and a lightconversion part 123. The display apparatus 300 according to the thirdexemplary embodiment may include components substantially similar tothose of the display apparatus 100 according to the first exemplaryembodiment shown in FIGS. 1 and 2, and thus, repeated descriptionthereof will be omitted.

The light emitting part 111 includes blue light emitting diodes 112 a,green light emitting diodes 112 b, transparent electrodes 116, blockingportions 118, and first connection electrodes 122. The light conversionpart 123 includes a phosphor layer 126, a color filter 127, and aprotective substrate 128.

Referring to FIG. 4, in this exemplary embodiment, one pixel includesthree subpixels SP1, SP2, and SP3, in which two blue light emittingdiodes 112 a and one green light emitting diode 112 b are disposed inthe three subpixels SP1, SP2, and SP3, respectively. Among the threesubpixels SP1, SP2, and SP3, a first subpixel SP1 has a larger size thansecond and third subpixels SP2 and SP3. The second and third subpixelsSP2, SP3 may have the same area from each other. Although FIG. 4 showsthat the first subpixel SP1 has an area about four times greater that ofthe second or third subpixel SP2 and SP3, the inventive concept is notlimited thereto, and the size of the subpixels may be modified invarious ways.

In this exemplary embodiment, the blue light emitting diodes 112 a aredisposed in the first and third subpixels SP1 and SP3, respectively, andthe green light emitting diode 112 b is disposed in the second subpixelSP2.

As in the first exemplary embodiment, the light conversion part 123includes a phosphor layer 126, a color filter 127, and a protectivesubstrate 128. The phosphor layer 126 includes a red phosphor layer 126c, a blocking layer 126 d, and a transparent layer 126 e. The colorfilter 127 includes a red light portion 127 c, a blocking portion 118,and a transparent portion 127 e. In this exemplary embodiment, the redphosphor layer 126 c is disposed in the first subpixel SP1 and thetransparent layer 126 e is disposed in the second and third subpixelsSP2, SP3. Each of the red phosphor layer 126 c and the transparent layer126 e may have a size corresponding to the size of the correspondingsubpixel. Thus, the red phosphor layer 126 c may have a larger size thanthe transparent layer 126 e.

In the color filter 127, the red light portion 127 c is disposed in thefirst subpixel SP1 and the transparent portion 127 e is disposed in eachof the second and third subpixels SP2 and SP3. Each of the red lightportion 127 c and the transparent portion 127 e may have a sizecorresponding to the size of the subpixel, in which the red lightportion 127 c or the transparent portion 127 e is disposed. Thus, thered light portion 127 c may have a larger size than the transparentportion 127 e.

As described above, because the first subpixel SP1 has a larger sizethan the second and third subpixels SP2 and SP3, the red phosphor layer126 c and the red light portion 127 c may be disposed only in the firstsubpixel SP1.

The second and third subpixels SP2 and SP3 allow green light and bluelight emitted from the green light emitting diode 112 b and the bluelight emitting diode 112 a to be discharged to the outside withoutwavelength conversion, respectively. On the other hand, in the firstsubpixel SP1, blue light emitted from the blue light emitting diode 112a is converted into red light through wavelength conversion of the redphosphor layer 126 c, whereby the red light may be discharged to theoutside. Here, the intensity of light emitted from the blue lightemitting diode 112 a may be reduced when discharged to the outside afterpassing through the red phosphor layer 126 c and the red light portion127 c.

According to this exemplary embodiment, since the first subpixel SP1, inwhich the red phosphor layer 126 c and the red light portion 127 c aredisposed, has a larger size than the second and third subpixels SP2 andSP3, light emitted from the subpixels SP1, SP2, and SP3 may have thesame intensity. Thus, the sizes of the first to third subpixels SP1,SP2, and SP3 may be changed such that light emitted from the subpixelsSP1, SP2, and SP3 can have the same intensity.

According to this exemplary embodiment, the light emitting part 111, thelight conversion part 123, and the TFT panel part 130 have the samestructures as those of the first exemplary embodiment, and are differentin size and location from those of the first exemplary embodiment inplan view.

FIG. 6 is a cross-sectional view of a pixel of a display apparatusaccording to a fourth exemplary embodiment of the present disclosure.

Referring to FIG. 6, the display apparatus 400 according to the fourthexemplary embodiment includes a light emitting diode part 110, a TFTpanel part 130, and an anisotropic conductive film 150. The lightemitting diode part 110 includes a light emitting part 111 and a lightconversion part 123. The display apparatus 400 according to the fourthexemplary embodiment may include components substantially similar tothose of the display apparatus 100 according to the first exemplaryembodiment shown in FIGS. 1 and 2, and thus, repeated descriptionthereof will be omitted.

The light emitting part 111 includes green light emitting diodes 112 b,UV light emitting diodes 112 d, transparent electrodes 116, blockingportion s 118, and first connection electrodes 122. The light conversionpart 123 includes a phosphor layer 126, a color filter 127, and aprotective substrate 128.

Unlike the first exemplary embodiment, the display apparatus 400according to the fourth exemplary embodiment includes the UV lightemitting diodes 112 d instead of the blue light emitting diodes 112 a.Thus, the UV light emitting diodes 112 d are disposed in two subpixels,respectively, and the green light emitting diode 112 b is disposed inone subpixel.

The phosphor layer 126 includes a blue phosphor layer 126 a, a redphosphor layer 126 c, and a transparent layer 126 e. The phosphor layer126 further includes a blocking layer 126 d disposed between the bluephosphor layer 126 a and the red phosphor layer 126 c, and between thered phosphor layer 126 c and the transparent layer 126 e.

As in the first exemplary embodiment, the red phosphor layer 126 c isdisposed at a location corresponding to the first subpixel SP1 and emitsred light through wavelength conversion of UV light emitted from the UVlight emitting diode 112 d. The blue phosphor layer 126 a is disposed ata location corresponding to the third subpixel SP3 and emits blue lightthrough wavelength conversion of UV light emitted from the UV lightemitting diode 112 d.

In addition, the color filter 127 includes a blue light portion 127 a, ared light portion 127 c, and a transparent portion 127 e. The colorfilter 127 further includes a light blocking portion 127 d, which isdisposed between the blue light portion 127 a and the red light portion127 c, and between the red light portion 127 c and the transparentportion 127 e.

As in the first exemplary embodiment, the red light portion 127 c isdisposed at a location corresponding to the first subpixel SP1 andallows light emitted from the red phosphor layer 126 c to passtherethrough such that only the red light can be discharged to theoutside therethrough. The blue light portion 127 a is disposed at alocation corresponding to the third subpixel SP3 and allows lightemitted from the blue phosphor layer 126 a to pass therethrough, suchthat only the blue light can be discharged to the outside therethrough.

In this exemplary embodiment, the blue light portion 127 a allows onlyblue light to pass therethrough by blocking light of other wavelengthsother than the blue light.

FIG. 7 is a cross-sectional view of a pixel of a display apparatusaccording to a fifth exemplary embodiment.

Referring to FIG. 7, the display apparatus 500 according to the fifthexemplary embodiment includes a light emitting diode part 110, a TFTpanel part 130, and an anisotropic conductive film 150. The lightemitting diode part 110 includes a light emitting part 111 and a lightconversion part 123. The display apparatus 500 according to the fifthexemplary embodiment may include components substantially similar tothose of the display apparatus 100 according to the first exemplaryembodiment shown in FIGS. 1 and 2, and thus, repeated descriptionthereof will be omitted.

The light emitting part 111 includes green light emitting diodes 112 b,UV light emitting diodes 112 d, transparent electrodes 116, blockingportions 118, and first connection electrodes 122. The light conversionpart 123 includes a phosphor layer 126 and a protective substrate 128.

Unlike the fourth exemplary embodiment, in the display apparatus 500according to the fifth exemplary embodiment, the light conversion part123 does not include the color filter 127. Accordingly, UV light emittedfrom one of two UV light emitting diodes 112 d in the light emittingpart 111 is converted into red light through wavelength conversion of ared phosphor layer 126 c of the phosphor layer 126, whereby the redlight may be discharged to the outside through the protective substrate128. In addition, UV light emitted from the other UV light emittingdiode 112 d is converted into blue light through wavelength conversionof a blue phosphor layer 126 a of the phosphor layer 126, whereby theblue light may be discharged to the outside through the protectivesubstrate 128.

More particularly, as in the fourth exemplary embodiment, the phosphorlayer 126 according to this exemplary embodiment includes the bluephosphor layer 126 a, the red phosphor layer 126 c, and the transparentlayer 126 e. As such, in this exemplary embodiment, when the lightconversion part 123 includes the phosphor layer 126 and the protectivesubstrate 128, the light conversion part 123 may be formed to have asmaller thickness than that in the fourth exemplary embodiment.

FIG. 8 is a plan view of a pixel of a display apparatus according to asixth exemplary embodiment. FIG. 9 is a cross-sectional view of thepixel of the display apparatus according to the sixth exemplaryembodiment.

Referring to FIG. 8 and FIG. 9, the display apparatus 600 according tothe sixth exemplary embodiment includes a light emitting diode part 110,a TFT panel part 130, and an anisotropic conductive film 150. The lightemitting diode part 110 includes a light emitting part 111 and a lightconversion part 123. The display apparatus 600 according to the sixthexemplary embodiment may include components substantially similar tothose of the display apparatus 100 according to the first exemplaryembodiment shown in FIGS. 1 and 2, and thus, repeated descriptionthereof will be omitted.

In this exemplary embodiment, one pixel includes four subpixels SP1,SP2, SP3, and SP4. Among the four subpixels SP1, SP2, SP3, and SP4, bluelight emitting diodes 112 a may be disposed in the first, third, andfourth subpixels SP1, SP3, and SP4, respectively, and a green lightemitting diode 112 b may be disposed in a second subpixel SP2.

In this exemplary embodiment, each of the subpixels SP1, SP2, SP3, andSP4 may have a larger size than the light emitting diode 112 a or 112 bdisposed in the corresponding subpixel SP1, SP2, SP3 or SP4. Thesubpixels SP1, SP2, SP3, SP4 may have the same size from each other.

In this exemplary embodiment, the structure of the light emitting part111 corresponding to one subpixel may be the same as that of the firstexemplary embodiment. In addition, one subpixel may have the same sizeas that of the first exemplary embodiment or may have a smaller sizethan that of the first exemplary embodiment, as needed.

The light conversion part 123 includes a phosphor layer 126, a colorfilter 127, and a protective substrate 128.

The phosphor layer 126 includes a red phosphor layer 126 c, atransparent layer 126 e, and a white phosphor layer 126 f, and mayfurther include a blocking layer 126 d disposed between the red phosphorlayer 126 c and the transparent layer 126 e, and between the transparentlayer 126 e and the white phosphor layer 126 f.

The red phosphor layer 126 c is disposed in the first subpixel SP1, inwhich the blue light emitting diode 112 a is disposed. The transparentlayer 126 e is disposed in each of the second and third subpixels SP2and SP3, in which the green light emitting diode and the blue lightemitting diode 112 a are disposed, respectively, and the white phosphorlayer 126 f is disposed in the fourth subpixel SP4, in which the bluelight emitting diode 112 a is disposed.

The white phosphor layer 126 f may emit white light through wavelengthconversion of blue light emitted from the blue light emitting diode 112a disposed in the fourth subpixel SP4.

The color filter 127 may include a red light portion 127 c, a lightblocking portion 127 d, and a transparent portion 127 e. In thisexemplary embodiment, the color filter 127 includes one red lightportion 127 c and three transparent portions 127 e, and the lightblocking portion 127 d may be disposed between the red light portion 127c and the transparent portion 127 e.

The red light portion 127 c is disposed in the first subpixel SP1 andblocks light having passed through the red phosphor layer 126 c otherthan the red light. The three transparent portions 127 e are disposed inthe second to fourth subpixels SP2, SP3, and SP4, respectively. Withthis structure, green light emitted from the green light emitting diode112 b disposed in the second subpixel SP2 may be discharged to theoutside through the transparent portion 127 e, and blue light emittedfrom the blue light emitting diode 112 a disposed in the third subpixelSP3 may be discharged to the outside through the transparent portion 127e. In addition, white light emitted from the white phosphor layer 126 fin the fourth subpixel SP4 may be discharged to the outside through thetransparent portion 127 e.

As such, the four subpixels SP1, SP2, SP3, and SP4 may form one pixel,whereby blue light, green light, red light, and white light may bedischarged to the outside.

FIG. 10 is a plan view of a pixel of a display apparatus according to aseventh exemplary embodiment.

Referring to FIG. 10, the display apparatus 700 according to the seventhexemplary embodiment includes a light emitting diode part 110, a TFTpanel part 130, and an anisotropic conductive film 150. The lightemitting diode part 110 includes a light emitting part 111 and a lightconversion part 123. The display apparatus 700 according to the seventhexemplary embodiment may include components substantially similar tothose of the display apparatus 100 to 600 according to the first tosixth exemplary embodiments, and thus, repeated description thereof willbe omitted.

The light emitting part 111 includes blue light emitting diodes 112 a,green light emitting diodes 112 b, transparent electrodes 116, blockingportions 118, and first connection electrodes 122. The light conversionpart 123 includes a phosphor layer 126 and a protective substrate 128.

Unlike the sixth exemplary embodiment, in the display apparatus 700according to the seventh exemplary embodiment, the light conversion part123 does not include the color filter 127. Accordingly, blue lightemitted from one of three blue light emitting diodes 112 a in the lightemitting part 111 is subjected to wavelength conversion while passingthrough a red phosphor layer 126 c, and blue light emitted from anotherblue light emitting diode is subjected to wavelength conversion whilepassing through the white phosphor layer 126 f. More particularly, bluelight emitted from the blue light emitting diode 112 a disposed in thefirst subpixel SP1 is converted into red light through wavelengthconversion of the red phosphor layer 126 c, whereby the red light isdischarged to the outside through the protective substrate 128, and bluelight emitted from the blue light emitting diode 112 a disposed in thefourth subpixel SP4 is converted into white light through wavelengthconversion of the white phosphor layer 126 f, whereby the white light isdischarged to the outside through the protective substrate 128.

In addition, green light and blue light emitted from the green lightemitting diode 112 b, and the blue light emitting diode 112 a disposedin the second and third subpixels SP2 and SP3, respectively, may bedischarged to the outside through the transparent layer 126 e and theprotective substrate 128 without wavelength conversion.

As such, in this exemplary embodiment, the light conversion part 123includes the phosphor layer 126 and the protective substrate 128, andthus, may have a smaller thickness than the light conversion part 123according to the sixth exemplary embodiment.

In addition, although the light emitting part 111 includes the bluelight emitting diodes 112 a and the green light emitting diodes 112 b inthe sixth and seventh exemplary embodiments, the light emitting part 111may further include UV light emitting diodes 112 d, as needed. The UVlight emitting diode 112 d may be disposed in each of the first subpixelSP1, in which the red phosphor layer 126 c is disposed, and the fourthsubpixel SP4, in which the white phosphor layer 126 f is disposed. Withthis structure, UV light emitted from the UV light emitting diode 112 ddisposed in the first subpixel SP1 is converted into red light throughwavelength conversion of the red phosphor layer 126 c, whereby the redlight may be discharged to the outside, and UV light emitted from the UVlight emitting diode 112 d disposed in the fourth subpixel SP4 isconverted into white light through wavelength conversion of the whitephosphor layer 126 f, whereby the white light may be discharged to theoutside.

As in the sixth and seventh exemplary embodiments, the second and thirdsubpixels SP2 and SP3 are provided with the green light emitting diode112 b and the blue light emitting diode 112 a, respectively.

FIG. 11 is a plan view of a pixel of a display apparatus according to aneighth exemplary embodiment. FIG. 12A is a cross-sectional view takenalong line A-A′ of FIG. 11, and FIG. 12B is a cross-sectional view takenalong line B-B′ of FIG. 11.

Referring to FIG. 11, FIG. 12A, and FIG. 12B, the display apparatus 800according to the eighth exemplary embodiment includes a light emittingdiode part 110, a TFT panel part 130, and an anisotropic conductive film150. The light emitting diode part 110 includes a light emitting part111 and a light conversion part 123. The display apparatus 800 accordingto the eighth exemplary embodiment may include components substantiallysimilar to those of the display apparatus 100 to 600 according to thefirst to sixth exemplary embodiments, and thus, repeated descriptionthereof will be omitted.

Referring to FIG. 11, in this exemplary embodiment, one pixel includesfour subpixels SP1, SP2, SP3, and SP4. Among the four subpixels SP1,SP2, SP3, and SP4, blue light emitting diodes 112 a may be disposed infirst, third, and fourth subpixels SP1, SP3, and SP4, respectively, anda green light emitting diode 112 b may be disposed in a second subpixelSP2.

Among the four subpixels SP1, SP2, SP3, and SP4, the first and fourthsubpixels SP1 and SP4 may have a larger size than the second and thirdsubpixels SP2 and SP3. The first and fourth subpixels SP1 and SP4 mayhave the same area from each other, and the second and third subpixelsSP2 and SP3 may have the same area from each other. Although FIG. 11shows that the first and fourth subpixels SP1 and SP4 have an area abouttwo times greater than that of the second and third subpixels SP2 andSP3, the inventive concept is not limited thereto, and the size of thesubpixels may be modified in various ways.

In this exemplary embodiment, blue light emitting diodes 112 a aredisposed in the first, third, and fourth subpixels SP1, SP3, and SP4,respectively, and a green light emitting diode 112 b is disposed in thesecond subpixel SP2.

As in the sixth exemplary embodiment, the light conversion part 123includes a phosphor layer 126, a color filter 127, and a protectivesubstrate 128. The phosphor layer 126 includes a red phosphor layer 126c, a blocking layer 126 d, a transparent layer 126 e, and a whitephosphor layer 126 f The color filter 127 includes a red light portion127 c, a blocking portion 118, and a transparent portion 127 e. The redphosphor layer 126 c is disposed in the first subpixel SP1 and the whitephosphor layer 126 f is disposed in the fourth subpixel SP4. Inaddition, the transparent layer 126 e is disposed in each of the secondand third subpixels SP2 and SP3. Here, each of the red phosphor layer126 c, the transparent layer 126 e, and the white phosphor layer 126 fhas a larger size than the corresponding subpixel. Thus, each of the redphosphor layer 126 c and the white phosphor layer 126 f may have alarger size than the transparent layer 126 e.

In the color filter 127, the red light portion 127 c is disposed in thefirst subpixel SP1 and the transparent portion 127 e is disposed in eachof the second to fourth subpixels SP2, SP3, and SP4. In this exemplaryembodiment, the red light portion 127 c disposed in the first subpixelSP1 and the transparent portion 127 e disposed in the fourth subpixelSP4 may have a larger size than the transparent portions 127 e disposedin the second and third subpixels SP2 and SP3.

As such, the first and fourth subpixels SP1 and SP4 have a larger sizethan the second and third subpixels SP2 and SP3, since the red phosphorlayer 126 c and the white phosphor layer 126 f are disposed in the firstand fourth subpixels SP1 and SP4, respectively.

The second and third subpixels SP2 and SP3 allow green light and bluelight emitted from the green light emitting diode 112 b and the bluelight emitting diode 112 a disposed therein to be discharged to theoutside without wavelength conversion. On the other hand, in the firstand fourth subpixels SP1 and SP4, blue light emitted from the blue lightemitting diodes 112 a disposed therein is subjected to wavelengthconversion in the red phosphor layer 126 c and the white phosphor layer126 f. As a result, the intensity of light emitted through the redphosphor layer 126 c and the white phosphor layer 126 f may be reduced.

According to this exemplary embodiment, since the first and fourthsubpixels SP1 and SP4, in which the red phosphor layer 126 c and thewhite phosphor layer 126 f are disposed, have a larger size than thesecond and third subpixels SP2 and SP3, light emitted from the subpixelsmay have the same intensity.

Here, the sizes of the first to fourth subpixels SP1, SP2, SP3, and SP4may be changed such that light emitted from the subpixels SP1, SP2, SP3,and SP4 may have the same intensity.

According to exemplary embodiments, the display apparatus employsmicro-light emitting diodes formed of nitride semiconductors to realizehigh resolution, low power consumption and high efficiency. Accordingly,the display apparatus can be applied to various apparatuses including awearable apparatus.

In addition, the display apparatus is manufactured using blue lightemitting diodes and green light emitting diodes, thereby improvingefficiency while reducing manufacturing costs.

Further, in the display apparatus according to exemplary embodiments, asubpixel emitting red light has a larger area than subpixels emittingblue light and green light. Thus, the display apparatus increasesintensity of red light emitted through phosphors such that blue light,green light and red light emitted from one pixel can have uniformintensity.

Although some exemplary embodiments have been described herein, itshould be understood by those skilled in the art that these embodimentsare given by way of illustration only, and that various modifications,variations, and alterations can be made without departing from thespirit and scope of the invention. Therefore, the scope of the presentdisclosure should be limited only by the accompanying claims andequivalents thereof.

What is claimed is:
 1. A display apparatus comprising: a panelsubstrate; a TFT panel part disposed on an upper surface of the panelsubstrate and comprising a plurality of connection electrodes; and alight emitting diode part disposed on the TFT panel part and comprisinga plurality of pixels, wherein each of the pixels comprises at leastthree sub-pixels including a first sub-pixel, a second sub-pixel, and athird sub-pixel, and wherein the first sub-pixel has a size greater thanthose of the second and the third sub-pixels.
 2. The display apparatusaccording to claim 1, wherein the TFT panel part comprises a TFT drivecircuit.
 3. The display apparatus according to claim 2, wherein the TFTdrive circuit is configured to drive the pixels in an active matrixmanner.
 4. The display apparatus according to claim 2, wherein the TFTdrive circuit is configured to drive the pixels in a passive matrixmanner.
 5. The display apparatus according to claim 1, wherein thesecond sub-pixel and the third sub-pixel have the same size as eachother.
 6. The display apparatus according to claim 1, wherein the sizeof the first sub-pixel is 4 times greater that of the second or thirdsub-pixel.
 7. The display apparatus according to claim 1, furthercomprising a blocking portion disposed between adjacent sub-pixels. 8.The display apparatus according to claim 7, further comprising aprotective substrate disposed on the light emitting diode part, whereinthe blocking portion is disposed on the protective substrate.
 9. Thedisplay apparatus according to claim 8, further comprising a lightconversion part disposed between the light emitting part and theprotective substrate, wherein the light conversion part is arranged onthe sub-pixels.
 10. The display apparatus according to claim 9, whereinthe light conversion part comprises a phosphor layer and a transparentlayer.
 11. The display apparatus according to claim 1, wherein each ofthe pixels further comprises a fourth sub-pixel.
 12. The displayapparatus according to claim 11, wherein at least one of the firstsub-pixel, the second sub-pixel, the third sub-pixel, and the fourthsub-pixel has a different size.
 13. The display apparatus according toclaim 11, wherein the first sub-pixel and the fourth sub-pixel have asize greater than those of the second sub-pixel and the third sub-pixel.14. The display apparatus according to claim 13, wherein the firstsub-pixel and the fourth sub-pixel have the same size as each other. 15.The display apparatus according to claim 13, wherein the secondsub-pixel and the third sub-pixel have the same size as each other. 16.The display apparatus according to claim 1, further comprising anisotropic conductive film disposed between the TFT panel part and thelight emitting diode part.
 17. The display apparatus according to claim16, wherein the isotropic conductive film comprises an adhesive organicinsulation material and conductive particles dispersed therein.
 18. Thedisplay apparatus according to claim 16, wherein: the panel substratelongitudinally extends along a first direction; and the isotropicconductive film has conductivity in a second direction crossing thefirst direction and insulation property in the first direction.